EVOLUTION OF SURFACE-TOPOGRAPHY DURING METALORGANIC VAPOR-PHASE EPITAXY OF INP/INGAAS/INP QUANTUM-WELL HETEROSTRUCTURES

被引：8

作者：

EPLER, JE

SOCHTIG, J

SIGG, HC

机构：

[1] Paul Scherrer Institute Zurich, CH-8048 Zurich

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 15期

关键词：

D O I：

10.1063/1.112826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evolution of surface topography during epitaxial growth of lattice matched InP/InGaAs/InP on (100) InP substrate is observed using in situ elastic light scattering supported by ex situ atomic force microscopy. A topographically smooth growth transition from InP to InGaAs is observed. However, the InP-on-InGaAs interface exhibits three-dimensional nucleation followed by planarization and two-dimensional epitaxy. The three-dimensional phase is a result of the high surface energy of InP relative to InGaAs. A growth pause after the InGaAs QW increases the transient roughness of the InP surface and increases the thickness of InP required for planarization. (C) 1994 American Institute of Physics.

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页码：1949 / 1951

页数：3

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