EFFECTS OF HYDROGEN-ONLY INTERRUPTS ON INGAAS/INP SUPERLATTICES GROWN BY OMVPE

被引：22

作者：

CLAWSON, AR ^{[1
]}

VU, TT ^{[1
]}

PAPPERT, SA ^{[1
]}

HANSON, CM ^{[1
]}

机构：

[1] USN COMMAND,CTR CONTROL & OCEAN SURVEILLANCE,NRAD DIV,DIV ELECTR MAT SCI,SAN DIEGO,CA 92152

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90513-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Superlattices of InGaAs/InP have been grown by OMVPE using short interval H-2-only growth interrupts to eliminate intermixing of hydride gases at the heterojunction interfaces. Changes in lattice strain resulting from interlayer alloying were measured by X-ray diffraction. The changes in strain are small and consistent with decomposition of the surfaces when exposed to the nonequilibrium H-2 vapor. Possible interface smoothing is seen with H-2 interrupt at the InGaAs to InP transition. A large compressive strain contribution is unaffected by the interrupts and is attributed to As carryover into the InP from surrounding solid deposits rather than the transport gases.

引用

页码：536 / 540

页数：5

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