OMVPE GROWTH OF GAINAS/INP AND GAINAS/GAINASP QUANTUM-WELLS

GaInAs/InP quantum wells (QWs) were grown by OMVPE. It was experimentally demonstrated that the substitutions from P to As atoms on InP surfaces in AsH3 flows and from P to As atoms on GaInAs surfaces in PH3 flows took place during growth interruption intervals at heterointerfaces. The substitutions between As and P atoms were limited to an atomic plane on the surface in an appropriate range of intervals. The substitution from P to As atoms was completed within a 0.5 s AsH3 flow interval, and that from As to P atoms within a 5 s PH3 flow interval at a substrate temperature of 600-degrees-C. Atomic arrangements at the heterointerfaces of high quality GaInAs/InP QWs were revealed. High quality GaInAs/GaInAsP (lambda = 1.3 mu-m) QWs were also grown using the optimal growth conditions for GaInAs/InP QWs.