HIGH-QUALITY INGAASP/INP SINGLE-QUANTUM WELLS AND SUPERLATTICE STRUCTURES GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY

被引：14

作者：

KONDO, M

YAMAZAKI, S

SUGAWARA, M

OKUDA, H

KATO, K

NAKAJIMA, K

机构：

[1] Fujitsu Lab, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Crystals--Epitaxial Growth - Photoluminescence - X-Rays--Diffraction;

D O I：

10.1016/0022-0248(88)90556-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-quality In0.73Ga0.27As0.60P0.40/InP single-quantum well (SQW) and multiple-quantum well (MQW) (or superlattice) structures have been successfully grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). 4 K photoluminescence (PL), optical absorption spectroscopy, small-angle X-ray diffraction (SAXD), and high-resolution transmission electron microscopy (HRTEM) were used to characterize the QW structures. HRTEM lattice images suggested that the narrowest InGaAsP SQW can be a one-monolayer wide (3 angstrom). A PL energy upshift as large as 325 mev and a PL linewidth as narrow as 14 mev were obtained for the narrowest well. SAXD and 4 K PL analyses confirmed the excellent uniformity of the composition and the layer thickness of each component of MQW structures along the growth directions. Well-defined excitonic resonance absorption peaks were also observed for MQW structures at 77 K.

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收藏

页码：376 / 381

页数：6

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