DIRECT DETERMINATION OF THE VALENCE-BAND OFFSETS AT GA0.47IN0.53AS/INP AND INP/GA0.47IN0.53AS HETEROSTRUCTURES BY ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY

被引：17

作者：

LANDESMAN, JP

GARCIA, JC

MASSIES, J

MAUREL, P

JEZEQUEL, G

HIRTZ, JP

ALNOT, P

机构：

[1] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

[2] UNIV RENNES 1,SPECT SOLIDE LAB,F-35042 RENNES,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.107418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet photoemission spectroscopy has been used to study the valence-band offsets at GaInAs/InP and InP/GaInAs heterostructures grown by metalorganic molecular-beam epitaxy. High-resolution In-4d/Ga-3d core levels were used. The measured values are 440 +/- 50 meV for the "direct" (GaInAs grown on InP) interface and 260 +/- 50 meV for the "inverse" interface. This band-offset asymmetry is attributed to a difference in the chemical natures of the two interfaces, deduced from the detailed analysis of the core-level spectra.

引用

页码：1241 / 1243

页数：3

共 9 条

[1]

FOULON Y, IN PRESS PHYS REV B

[2]

Grant R., 1987, HETEROJUNCTION BAND, P167

[3] ROLE OF INTERFACE STRAIN IN A LATTICE-MATCHED HETEROSTRUCTURE [J].