MEASUREMENT OF SEMICONDUCTOR HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTOEMISSION SPECTROSCOPY

被引：138

作者：

WALDROP, JR

GRANT, RW

KOWALCZYK, SP

KRAUT, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573326

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：835 / 841

页数：7

共 28 条

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[3] ON THE ADJUSTABILITY OF THE ABRUPT HETEROJUNCTION BAND-GAP DISCONTINUITY
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[7] XPS MEASUREMENTS OF ABRUPT GE-GAAS HETEROJUNCTION INTERFACES
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WALDROP, JR
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1451 - 1455
[8] MEASUREMENT OF POTENTIAL AT SEMICONDUCTOR INTERFACES BY ELECTRON-SPECTROSCOPY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 320 - 327
[9] OBSERVATION OF ORIENTATION DEPENDENCE OF INTERFACE DIPOLE ENERGIES IN GE-GAAS
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[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (10) : 656 - 659
[10] ELEMENTARY THEORY OF HETEROJUNCTIONS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021

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