SURFACE PHOTOVOLTAGE AND BAND BENDING AT METAL GAAS INTERFACES - A CONTACT POTENTIAL DIFFERENCE AND PHOTOEMISSION SPECTROSCOPY STUDY

被引：35

作者：

MAO, D

KAHN, A

LELAY, G

MARSI, M

HWU, Y

MARGARITONDO, G

SANTOS, M

SHAYEGAN, M

FLOREZ, LT

HARBISON, JP

机构：

[1] CNRS,CRMC2,F-13003 MARSEILLE,FRANCE

[2] UNIV AIX MARSEILLE 1,F-13331 MARSEILLE 3,FRANCE

[3] UNIV WISCONSIN,MADISON,WI 53706

[4] ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND

[5] BELLCORE,RED BANK,NJ 07701

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.585779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate various aspects of the problem of surface photovoltage (SPV) induced by the synchrotron radiation at (110) and (100) GaAs surfaces. A large and quasipermanent SPV is found at surfaces of low doped and low temperature (110) samples. SPV discharge mechanisms are investigated. Finally, the CPD technique is used to define conditions which minimize SPV and allow accurate measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and (110) and (100) GaAs surfaces.

引用

页码：2083 / 2089

页数：7

共 34 条

[1] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL GAP(110) INTERFACES - TEMPERATURE-DEPENDENT FERMI LEVEL MOVEMENT [J].