STUDY OF INTERRUPTED MOVPE GROWTH OF INGAAS/INP SUPERLATTICE

被引:35
作者
JIANG, XS
CLAWSON, AR
YU, PKL
机构
[1] Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla
基金
美国国家科学基金会;
关键词
D O I
10.1016/0022-0248(92)90515-K
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The effects of growth interruption at the InGaAs/InP interface in metalorganic vapor phase epitaxial InGaAs/InP superlattice were examined with X-ray diffractometry and optical absorption spectroscopy. For superlattices grown with growth interruption in a phosphine ambient, both compressive strain and exciton absorption wavelength in the superlattice decrease with the interruption time. For superlattices grown with growth interruption in a hydrogen ambient, no significant change in compressive strain is observed. These results, combined with observations from a computer simulation of the X-ray rocking curve, indicate that, for our experimental configuration, the compositional graded InGaAs/InP interface extends widely into the subsequent InP and cannot be eliminated by short time growth interruption.
引用
收藏
页码:547 / 552
页数:6
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