OPTIMAL-GROWTH INTERRUPTS FOR VERY HIGH-QUALITY INGAAS(P) INP SUPERLATTICES GROWN BY MOVPE

被引：29

作者：

LANDGREN, G ^{[1
]}

WALLIN, J ^{[1
]}

PELLEGRINO, S ^{[1
]}

机构：

[1] TELETTRA SPA,I-20059 VIMERCATE,ITALY

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 01期

关键词：

INGAASP; MOVPE; QUANTUM WELLS; INTERFACES;

D O I：

10.1007/BF02670928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of different growth interrupt schemes at the compositional interfaces in 30 period InGaAs(P)/InP superlattices grown by metal-organic vapor phase epitaxy have been studied for quarternary compositions-lambda = 1.35 and 1.52-mu-m as well as for the ternary case-lambda = 1.67-mu-m. The best full width at half maximum of the photoluminescence peaks at 4 K are 7-8 meV for the InGaAsP/InP and 4.6 meV for the InGaAs/InP superlattices indicating extremely high optical quality and vertical homogeneity of the samples. However, strong memory effects relating to both the presence and the absence of arsenic are evident from x-ray diffraction measurements. Reactor purging as a remedy is limited by the surface roughening and defect formation induced by a non-equilibrium vapor phase composition. Optimal growth interrupts must therefore be determined considering both the interface smoothness and abruptness and will in general be composition dependent.

引用

页码：105 / 108

页数：4

共 19 条

[1] PROPERTIES OF GAINAS(P)/INP MULTILAYERS AND SUPERLATTICES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE [J].