INFLUENCE OF THE GAS SWITCHING SEQUENCE ON THE OPTICAL-PROPERTIES OF ULTRATHIN INGAAS/INP QUANTUM-WELLS

被引：26

作者：

LANDGREN, G

OJALA, P

EKSTROM, O

机构：

[1] Swedish Institute of Microelectronics, S-164 21 Kista

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90523-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The optical properties of narrow quantum wells (QWs) and their dependence on the details in the gas switching procedure have been studied for the InGaAs/InP lattice matched system. Both energy and width of the low temperature photoluminescence peaks depend sensitively and systematically on this procedure. Optimized growth requires a short interrupt at each interface. Differences in well thickness of one monolayer were easily resolved in the spectra and strong luminescence was observed also from a one monolayer thin well. A narrow full width at half maximum of 15 meV for a three monolayer well thickness was measured.

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页码：573 / 577

页数：5

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