共 9 条
SINGLE-MONOLAYER QUANTUM-WELLS OF GAINAS IN INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
被引:32
作者:

SEIFERT, W
论文数: 0 引用数: 0
h-index: 0
机构: EPIQUIP AB,S-22370 LUND,SWEDEN

FORNELL, JO
论文数: 0 引用数: 0
h-index: 0
机构: EPIQUIP AB,S-22370 LUND,SWEDEN

LEDEBO, L
论文数: 0 引用数: 0
h-index: 0
机构: EPIQUIP AB,S-22370 LUND,SWEDEN

PISTOL, ME
论文数: 0 引用数: 0
h-index: 0
机构: EPIQUIP AB,S-22370 LUND,SWEDEN

SAMUELSON, L
论文数: 0 引用数: 0
h-index: 0
机构: EPIQUIP AB,S-22370 LUND,SWEDEN
机构:
[1] EPIQUIP AB,S-22370 LUND,SWEDEN
[2] UNIV LUND,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN
关键词:
D O I:
10.1063/1.102589
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
GaInAs/InP quantum wells differing in thickness between 1 and 20 monolayers (1 monolayer≊2.93 Å) have been grown by low-pressure (50 mbar) metalorganic vapor phase epitaxy and investigated by 2 K photoluminescence. To our knowledge this is the first observation of the one monolayer quantum well. Well-resolved photoluminescence peaks were observed and were attributed to recombination of excitons bound to quantum wells of defined monolayer thickness. The growth rate could be adjusted to produce a one monolayer quantum well. Its photoluminescence peak was observed at 1.245 eV, corresponding to a quantum confinement shift of 434 meV. The full width at half maximum of this peak was only 8 meV.
引用
收藏
页码:1128 / 1130
页数:3
相关论文
共 9 条
- [1] GROWTH AND CHARACTERIZATION OF STRAINED LAYERS OF GAASXP1-X[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 504 - 511LEYS, MR论文数: 0 引用数: 0 h-index: 0机构: PHILIPS LABS,BRIARCLIFF MANOR,NY 10510 PHILIPS LABS,BRIARCLIFF MANOR,NY 10510TITZE, H论文数: 0 引用数: 0 h-index: 0机构: PHILIPS LABS,BRIARCLIFF MANOR,NY 10510 PHILIPS LABS,BRIARCLIFF MANOR,NY 10510SAMUELSON, L论文数: 0 引用数: 0 h-index: 0机构: PHILIPS LABS,BRIARCLIFF MANOR,NY 10510 PHILIPS LABS,BRIARCLIFF MANOR,NY 10510PETRUZZELLO, J论文数: 0 引用数: 0 h-index: 0机构: PHILIPS LABS,BRIARCLIFF MANOR,NY 10510 PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
- [2] OPTICAL INVESTIGATION OF ATOMIC STEPS IN ULTRATHIN INGAAS/INP QUANTUM WELLS GROWN BY VAPOR LEVITATION EPITAXY[J]. APPLIED PHYSICS LETTERS, 1989, 54 (05) : 442 - 444MORAIS, PC论文数: 0 引用数: 0 h-index: 0COX, HM论文数: 0 引用数: 0 h-index: 0BASTOS, PL论文数: 0 引用数: 0 h-index: 0HWANG, DM论文数: 0 引用数: 0 h-index: 0WORLOCK, JM论文数: 0 引用数: 0 h-index: 0YABLONOVITCH, E论文数: 0 引用数: 0 h-index: 0NAHORY, RE论文数: 0 引用数: 0 h-index: 0
- [3] OPTICAL INVESTIGATION OF QUANTUM-WELL FLUCTUATIONS IN IN0.53GA0.47AS/INP SUPERLATTICES[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3374 - 3379SAUER, R论文数: 0 引用数: 0 h-index: 0机构: AT&T BELL LABS,HOLMDEL,NJ 07733 AT&T BELL LABS,HOLMDEL,NJ 07733HARRIS, TD论文数: 0 引用数: 0 h-index: 0机构: AT&T BELL LABS,HOLMDEL,NJ 07733 AT&T BELL LABS,HOLMDEL,NJ 07733TSANG, WT论文数: 0 引用数: 0 h-index: 0机构: AT&T BELL LABS,HOLMDEL,NJ 07733 AT&T BELL LABS,HOLMDEL,NJ 07733
- [4] MONOLAYER ABRUPTNESS IN HIGHLY STRAINED INASXP1-X/INP QUANTUM WELL INTERFACES[J]. APPLIED PHYSICS LETTERS, 1989, 54 (12) : 1142 - 1144SCHNEIDER, RP论文数: 0 引用数: 0 h-index: 0机构: NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208 NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208WESSELS, BW论文数: 0 引用数: 0 h-index: 0机构: NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208 NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208
- [5] ATOMIC ABRUPTNESS IN INGAASP/INP QUANTUM WELL HETEROINTERFACES GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. APPLIED PHYSICS LETTERS, 1988, 53 (11) : 971 - 973THIJS, PJA论文数: 0 引用数: 0 h-index: 0MONTIE, EA论文数: 0 引用数: 0 h-index: 0VANKESTEREN, HW论文数: 0 引用数: 0 h-index: 0HOOFT, GW论文数: 0 引用数: 0 h-index: 0
- [6] CHEMICAL BEAM EPITAXY OF GA0.47IN0.53AS/INP QUANTUM-WELLS AND HETEROSTRUCTURE DEVICES[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 261 - 269TSANG, WT论文数: 0 引用数: 0 h-index: 0机构: AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA
- [7] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 220 - 222TSANG, WT论文数: 0 引用数: 0 h-index: 0SCHUBERT, EF论文数: 0 引用数: 0 h-index: 0
- [8] ATOMIC STEPS AT GALNAS/INP INTERFACES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. APPLIED PHYSICS LETTERS, 1988, 52 (04) : 290 - 292WANG, TY论文数: 0 引用数: 0 h-index: 0机构: UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112 UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112FRY, KL论文数: 0 引用数: 0 h-index: 0机构: UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112 UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112PERSSON, A论文数: 0 引用数: 0 h-index: 0机构: UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112 UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112REIHLEN, EH论文数: 0 引用数: 0 h-index: 0机构: UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112 UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112STRINGFELLOW, GB论文数: 0 引用数: 0 h-index: 0机构: UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112 UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112
- [9] ATOMIC STEPS IN THIN GAINAS INP QUANTUM-WELL STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2674 - 2680WANG, TY论文数: 0 引用数: 0 h-index: 0机构: UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112FRY, KL论文数: 0 引用数: 0 h-index: 0机构: UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112PERSSON, A论文数: 0 引用数: 0 h-index: 0机构: UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112REIHLEN, EH论文数: 0 引用数: 0 h-index: 0机构: UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112STRINGFELLOW, GB论文数: 0 引用数: 0 h-index: 0机构: UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112