ATOMIC STEPS IN THIN GAINAS INP QUANTUM-WELL STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：45

作者：

WANG, TY

FRY, KL

PERSSON, A

REIHLEN, EH

STRINGFELLOW, GB

机构：

[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112

[2] UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.341008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2674 / 2680

页数：7

共 39 条

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[3] COOK LW, 1981, I PHYS C SER, V56, P361
[4] QUANTUM WELL STRUCTURES OF IN0.53GA0.47AS/INP GROWN BY HYDRIDE VAPOR-PHASE EPITAXY IN A MULTIPLE CHAMBER REACTOR
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 955 - 957
[6] ARSENIC PRESSURE-DEPENDENCE OF INTERDIFFUSION OF ALGAAS/GAAS INTERFACE IN QUANTUM-WELL
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L926 - L928
[7] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 877 - 879
[8] HULL R, 1987, I PHYS C SER, V83, P209
[9] TRANSPORT-PROPERTIES AND PERSISTENT PHOTOCONDUCTIVITY IN INP/IN0.53GA0.47AS MODULATION-DOPED HETEROJUNCTIONS
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ANDERSON, DA
TAYLOR, LL
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 657 - 664
[10] HIGH-TEMPERATURE OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INP MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1243 - 1245

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