GROWTH AND ANALYSIS OF QUANTUM-WELL STRUCTURES

The interfacial structure of lattice matched MOVPE grown GaInAs/InP is discussed and, in addition, also that of MBE grown GaAs/AlGaAs quantum well structures. Characterization methods providing information from the interfaces on an atomic scale: TEM, X-ray diffractometry and PL, are reviewed in detial. It is shown that compositional grading cannot readily be distinguished from atomic steps at the interfaces by TEM or X-ray diffractometry. PL strongly indicates the presence of atomic steps but additional grading may occur. However, the data obtained by by combining these methods in a more comprehensive investigation using the switching sequences and the growth time per well as parameters permit identification of interfacial details and growth mechanisms in quantum wells otherwise not attainable.