BEHAVIOR OF LARGE-SCALE SURFACE PERTURBATIONS DURING SILICON EPITAXIAL GROWTH

被引：13

作者：

RUNYAN, WR

ALEXANDER, EG

CRAIG, SE

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 11期

关键词：

D O I：

10.1149/1.2426436

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1154 / +

页数：1

共 11 条

[1]

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[2]

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[6] MORPHOLOGICAL CHANGES OF A SURFACE OF REVOLUTION DUE TO CAPILLARITY-INDUCED SURFACE DIFFUSION [J].

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MULLINS, WW .

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[7] GROWTH AND ETCHING OF SI THROUGH WINDOWS IN SIO2 [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) :381-+

[8]

OXLEY JO, 1966, VAPOR DEPOSITION

[9]

POWELL CF, 1966, VAPOR DEPOSITION ED

[10] ANALYSIS OF THE HYDROGEN REDUCTION OF SILICON TETRACHLORIDE PROCESS ON THE BASIS OF A QUASI-EQUILIBRIUM MODEL [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1381-1383

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