GROWTH AND ETCHING OF SI THROUGH WINDOWS IN SIO2

[1] ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284

[2] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 965 - &

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] JACKSON DM, 1965, T METALL SOC AIME, V233, P596

[5] Jackson J.D., 1962, CLASSICAL ELECTRODYN, Vfirst, P89

[6] SELECTIVE EPITAXIAL DEPOSITION OF SILICON [J]. NATURE, 1962, 195 (4840) : 485 - &

[7] EQUILIBRIUM BEHAVIOR OF SILICON-HYDROGEN-CHLORINE SYSTEM [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 460 - &

[8] SCHAFER H, 1962, CHEMISCHE TRANSPORTR, V28

[9] VAPOR PHASE DEPOSITION AND ETCHING OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 988 - &

[10] SHEPHERD WH, PERSONAL COMMUNICATI

[1] ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284

[2] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 965 - &

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] JACKSON DM, 1965, T METALL SOC AIME, V233, P596

[5] Jackson J.D., 1962, CLASSICAL ELECTRODYN, Vfirst, P89

[6] SELECTIVE EPITAXIAL DEPOSITION OF SILICON [J]. NATURE, 1962, 195 (4840) : 485 - &

[7] EQUILIBRIUM BEHAVIOR OF SILICON-HYDROGEN-CHLORINE SYSTEM [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 460 - &

[8] SCHAFER H, 1962, CHEMISCHE TRANSPORTR, V28

[9] VAPOR PHASE DEPOSITION AND ETCHING OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 988 - &

[10] SHEPHERD WH, PERSONAL COMMUNICATI