OPTICAL TUNING OF MONOLITHIC IN0.53GA0.47AS/IN0.52AL0.48AS/INP MODULATION-DOPED FIELD-EFFECT TRANSISTOR OSCILLATORS AT X-BAND AND R-BAND

被引：3

作者：

LAI, R

BHATTACHARYA, PK

BROCK, T

机构：

[1] Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 12期

关键词：

OSCILLATORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have experimentally studied the optical control and optical tuning characteristics of monolithically integrated In0.53Ga0.47As/In0.52Al0.48As modulation-doped field-effect transistor (MODFET) oscillators operating in the X and R bands. For a 20-mu-W intrinsic photoexcitation on the device, the maximum frequency shift for the X- and R-band oscillators was 8.7 and 11.7 MHz, respectively.

引用

收藏

页码：1056 / 1058

页数：3

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