OPTICAL GAIN AND LARGE-SIGNAL CHARACTERISTICS OF ILLUMINATED GAAS-MESFETS

被引：21

作者：

DARLING, RB

UYEMURA, JP

机构：

[1] UNIV WASHINGTON,SCH ELECT ENGN,SEATTLE,WA 98195

[2] UNIV WASHINGTON,MICROELECTR RES CTR,SEATTLE,WA 98195

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 07期

关键词：

D O I：

10.1109/JQE.1987.1073485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1160 / 1171

页数：12

共 40 条

[1] GAAS MESFET - HIGH-SPEED OPTICAL DETECTOR [J].

BAACK, C ;

ELZE, G ;

WALF, G .

ELECTRONICS LETTERS, 1977, 13 (07) :193-193

[2]

Born M, 1980, PRINCIPLES OPTICS

[3]

Bube R.H., 1960, PHOTOCONDUCTIVITY SO

[4]

BUBE RH, 1974, ELECTRONIC PROPERTIE

[5] PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :971-976

[6] OPTICALLY INDUCED BACKGATING TRANSIENTS IN GAAS-FETS [J].

CARRUTHERS, TF ;

ANDERSON, WT ;

WELLER, JF .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) :580-582

[7] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].

CASEY, HC ;

SELL, DD ;

WECHT, KW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257

[8] OPTICAL EFFECT ON GAAS-MESFETS [J].

CHATURVEDI, GJ ;

PUROHIT, RK ;

SHARMA, BL .

INFRARED PHYSICS, 1983, 23 (02) :65-68

[9] TRANSIT-TIME PHOTOCONDUCTIVITY IN HIGH-FIELD FET CHANNELS [J].

DARLING, RB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :433-444

[10]

DESALLES AA, 1981, APPL PHYS LETT, V38, P392

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