PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS

被引：122

作者：

CARD, HC ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 12期

关键词：

D O I：

10.1016/0038-1101(77)90206-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：971 / 976

页数：6

相关论文

共 32 条

[1] IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS
ANDERSON, WA
MILANO, RA
[J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 206 - 208
[2] SCHOTTKY-BARRIER DIODES FOR SOLAR ENERGY-CONVERSION
ANDERSON, WA
DELAHOY, AE
[J]. PROCEEDINGS OF THE IEEE, 1972, 60 (11) : 1457 - 1458
[3] ANDERSON WA, 1975, IEDM DIGEST, P217
[4] [Anonymous], [No title captured]
[5] STUDIES OF TUNNEL MOS DIODES .2. THERMAL EQUILIBRIUM CONSIDERATIONS
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1602 - +
[6] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[7] MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS
CARD, HC
YANG, ES
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 51 - 53
[8] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 365 - 374
[9] POTENTIAL BARRIERS TO ELECTRON TUNNELLING IN ULTRATHIN FILMS OF SIO2
CARD, HC
[J]. SOLID STATE COMMUNICATIONS, 1974, 14 (10) : 1011 - 1014
[10] ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS
CARD, HC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) : 538 - 544

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