OPTICALLY INDUCED BACKGATING TRANSIENTS IN GAAS-FETS

被引：12

作者：

CARRUTHERS, TF

ANDERSON, WT

WELLER, JF

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 11期

关键词：

D O I：

10.1109/EDL.1985.26237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：580 / 582

页数：3

共 10 条

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[2]

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[3] TRANSIENT RADIATION EFFECTS IN GAAS DEVICES - BULK CONDUCTION AND CHANNEL MODULATION PHENOMENA IN D-MESFET, E-JFET, AND N+-SI-N+ STRUCTURES [J].

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[4] HIGH-SPEED RESPONSE OF A GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR TO ELECTRON-BEAM EXCITATION [J].

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WIEDER, HH .

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[5]

KOCOT C, 1982, IEEE T ELECTRON DEV, V29, P1059

[6]

Lee C. P., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P169

[7] CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS [J].

LEE, CP ;

LEE, SJ ;

WELCH, BM .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :97-98

[8] LONG-TERM RADIATION TRANSIENTS IN GAAS-FETS [J].

SIMONS, M ;

KING, EE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5080-5086

[9] TRANSIENT RADIATION STUDY OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IMPLANTED IN CR-DOPED AND UNDOPED SUBSTRATES [J].

SIMONS, M ;

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DAY, HM .

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[10]

SUBRAMANIAN S, 1984, IEEE T ELECTRON DEV, V32, P28

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