GAASXSB1-X/INYAL1-YAS P-CHANNEL HETEROSTRUCTURE FET WITH HIGH TRANSCONDUCTANCE AND LOW GATE LEAKAGE CURRENT

被引：6

作者：

MARTINEZ, MJ ^{[1
]}

SCHUERMEYER, FL ^{[1
]}

STUTZ, CE ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT ELECT & COMP ENGN,TUCSON,AZ 85721

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 03期

关键词：

D O I：

10.1109/55.215133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first known p-channel GaAsxSb1-x/InyAl1-yAs HFET's on InP. The devices, using a strained-layer GaAsxSb1-x channel, have achieved extrinsic transconductances of 40 mS/mm and intrinsic transconductances of 100 mS/mm. In addition to high transconductance, the devices exhibit excellent pinchoff and demonstrate a record gate turn-on voltage of -3 V as a result of extremely low gate leakage currents, making them exceptional candidates for complementary technologies. These outstanding gate characteristics are attributed to the valence band-edge discontinuity of 0.64 eV.

引用

页码：126 / 128

页数：3

共 8 条

[1]

GRIDER DE, 1991 IEEE GAAS IC S, P71

[2]

MARTINEZ MJ, UNPUB J APPL PHYS

[3]

MARTINEZ MJ, 4TH P INT C INP REL, P354

[4]

NAKATA Y, 1989, J CRYST GROWTH, V363

[5]

Rai Abhishek, UNPUB

[6]

RUDEN PP, 1989, IEDM, P217

[7] BAND-EDGE ALIGNMENT IN HETEROSTRUCTURES [J].

SCHUERMEYER, FL ;

COOK, P ;

MARTINEZ, E ;

TANTILLO, J .

APPLIED PHYSICS LETTERS, 1989, 55 (18) :1877-1878

[8] BAND DISCONTINUITY FOR GAAS ALGAAS HETEROJUNCTION DETERMINED BY C-V PROFILING TECHNIQUE [J].

WATANABE, MO ;

YOSHIDA, J ;

MASHITA, M ;

NAKANISI, T ;

HOJO, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5340-5344

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