A NEW MODEL FOR DIELECTRIC-BREAKDOWN PHENOMENON IN SILICON DIOXIDE FILMS

被引：14

作者：

CHEN, DN ^{[1
]}

CHENG, YC ^{[1
]}

机构：

[1] UNIV HONG KONG,DEPT ELECT ENGN,HONG KONG,HONG KONG

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.338096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1592 / 1600

页数：9

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