SELF-HEALING BREAKDOWN MEASUREMENTS OF PYROLYTIC ALUMINUM OXIDE FILMS ON SILICON

被引：31

作者：

CARNES, JE

DUFFY, MT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 11期

关键词：

D O I：

10.1063/1.1659779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4350 / +

页数：1

共 13 条

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J].

ABOAF, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :948-&

[2] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].

CHOU, NJ ;

ELDRIDGE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+

[3] INTERFACE PROPERTIES OF SI-(SIO2)-AL2 O3 STRUCTURES [J].

DUFFY, MT ;

REVESZ, AG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) :372-+

[4] THICKNESS INFLUENCE IN BREAKDOWN PHENOMENA OF THIN DIELECTRIC FILMS [J].

FORLANI, F ;

MINNAJA, N .

PHYSICA STATUS SOLIDI, 1964, 4 (02) :311-324

[5]

FRITZSCHE C, 1967, Z ANGEW PHYSIK, V24, P48

[6] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J].

KLEIN, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) :788-+

[7] MAXIMUM DIELECTRIC STRENGTH OF THIN SILICON OXIDE FILMS [J].

KLEIN, N ;

GAFNI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :281-+

[8]

KLEIN N, 1969, ADVAN ELECTRON ELECT, V26, P309

[9] ELECTRICAL BREAKDOWN OF MOS STRUCTURES AND ITS DEPENDENCE UPON OXIDATION PROCESS [J].

LAVERTY, SJ ;

RYAN, WD .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1969, 26 (05) :471-+

[10] THEORY OF DIELECTRIC BREAKDOWN IN SOLIDS [J].

ODWYER, JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) :239-+

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