SUPERIORITY OF GROUP VII ELEMENTS OVER GROUP-III ELEMENTS AS DONOR DOPANTS IN MOCVD ZNSE

被引:33
作者
KAMATA, A
UEMOTO, T
OKAJIMA, M
HIRAHARA, K
KAWACHI, M
BEPPU, T
机构
[1] Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
关键词
CRYSTALS - Growing - ELECTRIC CONDUCTIVITY - LUMINESCENCE;
D O I
10.1016/0022-0248(90)90731-Y
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Comparison of group III and group VII elements as donor species in ZnSe MOCVD growth has been studied from the viewpoint of their electrical properties, luminescence qualities and their controllabilities. Low resistivity high quality blue emitting ZnSe has been grown by doping a group VII donor chlorine, in atmospheric MOCVD. The superiority of group VII elements over group III elements with regard to carrier concentration controllability and carrier producing efficiency has been predicted.
引用
收藏
页码:285 / 289
页数:5
相关论文
共 11 条
[1]  
BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2
[2]  
KAMATA A, 1985, 17TH C SOL STAT DEV, P233
[3]  
KAMATA A, 1986, 18TH C SOL STAT DEV, P651
[4]   GA-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY FOR BLUE-LIGHT EMITTING DIODES [J].
NIINA, T ;
MINATO, T ;
YONEDA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L387-L389
[5]  
OHKAWA K, 1986, 18TH C SOL STAT DEV, P635
[6]  
OKAJIMA M, 1986, 18TH C SOL STAT DEV, P647
[8]   EFFECT OF SE VAPOR-PRESSURE AND THERMAL-DISSOCIATION PROCESS ON EXCITONIC-EMISSION LINES IN MOLECULAR-BEAM EPITAXIALLY GROWN HIGH-PURITY ZINC SELENIDE [J].
TAGUCHI, T ;
YAO, T .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :3002-3005
[9]  
WATKINS GD, 1977, I PHYS C SER, V31, P95
[10]   CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].
YAO, T .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :31-40