CMOS RELIABILITY

被引：12

作者：

GALLACE, LJ

PUJOL, HL

SCHNABLE, GL

机构：

来源：

MICROELECTRONICS RELIABILITY | 1978年 / 17卷 / 02期

关键词：

D O I：

10.1016/0026-2714(78)90728-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：287 / 304

页数：18

共 100 条

[1] RELIABILITY REPORT ON LOW-POWER TTL INTEGRATED-CIRCUITS [J].

ADAMS, JD ;

GIANELLE, WH .

MICROELECTRONICS AND RELIABILITY, 1972, 11 (02) :171-&

[2]

ALLAN R, 1975, IEEE SPECTRUM, V12, P40

[3]

ARMSTRONG L, 1976, ELECTRONICS, V49, P74

[4] ANALYSIS OF DEPOSITED GLASS LAYER DEFECTS [J].

BART, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, :128-135

[5]

BEARD R, 1972, 10TH P ANN C REL PHY, P72

[6] INDUCED PASSIVATION DEFECT STUDY [J].

BERGER, RG ;

GREGORITSCH, AJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, :121-127

[7]

BURNS DJ, 1975, 1975 P A REL MAINT S, P354

[8]

CARR WN, 1972, MOSLSI DESIGN APPLIC

[9] RELIABILITY OF MOS LSI CIRCUITS [J].

COLBOURNE, ED ;

COVERLEY, GP ;

BEHERA, SK .

PROCEEDINGS OF THE IEEE, 1974, 62 (02) :244-259

[10] BULK AND SURFACE CONDUCTION IN CVD SIO2 AND PSG PASSIVATION LAYERS [J].

COMIZZOLI, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) :386-391

← 1 2 3 4 5 6 7 8 9 10 →