STRUCTURE AND OPTICAL-PROPERTIES OF TIN OXIDE-FILMS

[11] THE EFFECT OF PHOSPHORUS DOPING ON TIN OXIDE-FILMS MADE BY THE OXIDATION OF PHOSPHINE AND TETRAMETHYLTIN .1. GROWTH AND ETCHING PROPERTIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1592 - 1595

[12] CHEMICAL VAPOR-DEPOSITION OF ANTIMONY-DOPED TIN OXIDE-FILMS FORMED FROM DIBUTYL TIN DIACETATE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) : 270 - 277

[13] IN2O3-(SN) AND SNO2-(F) FILMS - APPLICATION TO SOLAR-ENERGY CONVERSION .2. ELECTRICAL AND OPTICAL-PROPERTIES [J]. MATERIALS RESEARCH BULLETIN, 1979, 14 (02) : 163 - 175

[14] MAURODIEN G, 1984, THIN SOLID FILMS, V113, P93

[15] UV ABSORPTION EDGE OF TIN OXIDE THIN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3767 - &

[16] OPTICAL PROPERTIES AND ELECTRONIC STRUCTURE OF AMORPHOUS GERMANIUM [J]. PHYSICA STATUS SOLIDI, 1966, 15 (02): : 627 - +

[17] Theye M.-L., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V652, P146, DOI 10.1117/12.938371

[18] ZERNANI H, 1986, J APPL PHYS, V60, P2523

[11] THE EFFECT OF PHOSPHORUS DOPING ON TIN OXIDE-FILMS MADE BY THE OXIDATION OF PHOSPHINE AND TETRAMETHYLTIN .1. GROWTH AND ETCHING PROPERTIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1592 - 1595

[12] CHEMICAL VAPOR-DEPOSITION OF ANTIMONY-DOPED TIN OXIDE-FILMS FORMED FROM DIBUTYL TIN DIACETATE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) : 270 - 277

[13] IN2O3-(SN) AND SNO2-(F) FILMS - APPLICATION TO SOLAR-ENERGY CONVERSION .2. ELECTRICAL AND OPTICAL-PROPERTIES [J]. MATERIALS RESEARCH BULLETIN, 1979, 14 (02) : 163 - 175

[14] MAURODIEN G, 1984, THIN SOLID FILMS, V113, P93

[15] UV ABSORPTION EDGE OF TIN OXIDE THIN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3767 - &

[16] OPTICAL PROPERTIES AND ELECTRONIC STRUCTURE OF AMORPHOUS GERMANIUM [J]. PHYSICA STATUS SOLIDI, 1966, 15 (02): : 627 - +

[17] Theye M.-L., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V652, P146, DOI 10.1117/12.938371

[18] ZERNANI H, 1986, J APPL PHYS, V60, P2523