CHARACTERISTICS OF W FILMS FORMED BY ION-BEAM ASSISTED DEPOSITION

被引：13

作者：

KOH, YB ^{[2
]}

GAMO, K

NAMBA, S

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 05期

关键词：

D O I：

10.1116/1.585664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of tungsten films and W-GaAs contact characteristics formed by low energy ion beam assisted deposition (IBAD) have been investigated. For the deposition of tungsten films, low energy (0.5-4.0 keV) H2+ and Ar+ beams were irradiated in W(CO)6 ambient. The deposition rate was higher for heavier ion (Ar+) and higher ion energy because of higher energy deposition rate. The deposited films consisted of about 75% of tungsten and 11%-14% of oxygen and carbon, respectively. The resistivity of deposited films was about 600-800-mu-OMEGA cm. The damage induced during ion beam irradiation was examined by W-GaAs contact characteristics. The results suggest that it is desirable to use lighter ion and lower ion energy to reduce the damage on the substrate.

引用

页码：2648 / 2652

页数：5

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