AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY ON ION-BEAM INDUCED DEPOSITION OF TUNGSTEN USING WF6

被引：16

作者：

XU, Z

KOSUGI, T

GAMO, K

NAMBA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1959 / 1962

页数：4

共 14 条

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[5]

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[10] DISTRIBUTION PROFILES AND ANNEALING CHARACTERISTICS OF DEFECTS IN GAAS INDUCED BY LOW-ENERGY FIB IRRADIATION [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2037-L2039

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