DISTRIBUTION PROFILES AND ANNEALING CHARACTERISTICS OF DEFECTS IN GAAS INDUCED BY LOW-ENERGY FIB IRRADIATION

被引：16

作者：

MIYAKE, H

YUBA, Y

GAMO, K

NAMBA, S

MIMURA, R

AIHARA, R

机构：

[1] OSAKA UNIV, FAC ENGN SCI, DEPT ELECT ENGN, TOYONAKA, OSAKA 560, JAPAN

[2] JEOL LTD, TOKYO 196, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.L2037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2037 / L2039

页数：3

共 9 条

[1] DAMAGE AND CONTAMINATION-FREE GAAS AND ALGAAS ETCHING USING A NOVEL ULTRAHIGH-VACUUM REACTIVE ION-BEAM ETCHING SYSTEM WITH ETCHED SURFACE MONITORING AND CLEANING METHOD
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[2] A 0-30 KEV LOW-ENERGY FOCUSED ION-BEAM SYSTEM
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[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
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[4] COMPENSATION MECHANISMS RELATED TO BORON IMPLANTATION IN GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8706 - 8715
[5] DEFECTS INDUCED BY FOCUSED ION-BEAM IMPLANTATION IN GAAS
MIYAKE, H
YUBA, Y
GAMO, K
NAMBA, S
SHIOKAWA, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03): : 1001 - 1005
[6] A VARIABLE ENERGY FOCUSED ION-BEAM SYSTEM FOR INSITU MICROFABRICATION
NARUM, DH
PEASE, RFW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03): : 966 - 973
[7] AN ANNEALING STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN GAAS
PONS, D
MIRCEA, A
BOURGOIN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4150 - 4157
[8] CHARACTERIZATION OF ION-BEAM ETCHING INDUCED DEFECTS IN GAAS
YUBA, Y
ISHIDA, T
GAMO, K
NAMBA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 253 - 256
[9] YUBA Y, 1984, J ELECTRON MATER A, V14, P973

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