DEFECTS INDUCED BY FOCUSED ION-BEAM IMPLANTATION IN GAAS

被引：22

作者：

MIYAKE, H ^{[1
]}

YUBA, Y ^{[1
]}

GAMO, K ^{[1
]}

NAMBA, S ^{[1
]}

SHIOKAWA, T ^{[1
]}

机构：

[1] INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.584335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1001 / 1005

页数：5

共 14 条

[1]

HIRAYAMA Y, 1985, JPN J APPL PHYS, V24, P965

[2]

IGUCHI H, 1986, JPN J APPL PHYS, V25, P560

[3] ION-BEAM LITHOGRAPHY - AN INVESTIGATION OF RESOLUTION LIMITS AND SENSITIVITIES OF ION-BEAM EXPOSED PMMA [J].

KARAPIPERIS, L ;

DUBREUIL, D ;

DAVID, P ;

DIEUMEGARD, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :353-357

[4] STUDY OF ELECTRON TRAPS IN N-GAAS RESULTING FROM INFRARED RAPID THERMAL ANNEALING [J].

KUZUHARA, M ;

NOZAKI, T .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3131-3136

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[6] COMPENSATION MECHANISMS RELATED TO BORON IMPLANTATION IN GAAS [J].

MARTIN, GM ;

SECORDEL, P ;

VENGER, C .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8706-8715

[7] FOCUSED ION-BEAM TECHNOLOGY AND APPLICATIONS [J].

MELNGAILIS, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :469-495

[8] FORMATION OF SUBMICRON ISOLATION REGION IN GAAS BY GA FOCUSED ION-BEAM IMPLANTATION [J].

NAKAMURA, K ;

NOZAKI, T ;

SHIOKAWA, T ;

TOYODA, K ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :203-206

[9]

NAKAMURA K, 1985, JPN J APPL PHYS, V24, P903

[10]

NAMBA S, 1983, P INT ION ENG C, V111, P1533

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