FORMATION OF SUBMICRON ISOLATION REGION IN GAAS BY GA FOCUSED ION-BEAM IMPLANTATION

被引：13

作者：

NAKAMURA, K ^{[1
]}

NOZAKI, T ^{[1
]}

SHIOKAWA, T ^{[1
]}

TOYODA, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：203 / 206

页数：4

共 8 条

[1] PD-NI-SI-BE-B LIQUID-METAL ION-SOURCE FOR MASKLESS ION-IMPLANTATION [J].

ARIMOTO, H ;

TAKAMORI, A ;

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HASHIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03) :L165-L166

[2] FORMATION OF SUB-MICRON ISOLATION IN GAAS BY IMPLANTING A FOCUSED BORON ION-BEAM EMITTED FROM A PD-NI-SI-BE-B LM ION-SOURCE [J].

ARIMOTO, H ;

TAKAMORI, A ;

MIYAUCHI, E ;

HASHIMOTO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :54-57

[3] EXISTENCE OF DEEP ACCEPTORS IN GA-IMPLANTED AND B-IMPLANTED GAAS AFTER CLOSE-CONTACT ANNEALING [J].

DANSAS, P .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2212-2216

[4] FORMATION OF HIGH-RESISTANCE REGION IN GAAS BY GA FOCUSED-ION-BEAM IMPLANTATION [J].

NAKAMURA, K ;

NOZAKI, T ;

SHIOKAWA, T ;

TOYODA, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12) :L903-L904

[5]

NAMBA S, 1983, P INT ION ENG C, V111, P1533

[6] HIGH-RESOLUTION, ION-BEAM PROCESSES FOR MICROSTRUCTURE FABRICATION [J].

SELIGER, RL ;

KUBENA, RL ;

OLNEY, RD ;

WARD, JW ;

WANG, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1610-1612

[7] FINE FOCUSED ION-BEAMS [J].

SELIGER, RL ;

KUBENA, RL ;

WANG, V .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :3-10

[8]

WAGNER A, 1983, SOLID STATE TECHNOL, V26, P97

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