ION-BEAM LITHOGRAPHY - AN INVESTIGATION OF RESOLUTION LIMITS AND SENSITIVITIES OF ION-BEAM EXPOSED PMMA

被引:16
作者
KARAPIPERIS, L
DUBREUIL, D
DAVID, P
DIEUMEGARD, D
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期
关键词
D O I
10.1116/1.583262
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:353 / 357
页数:5
相关论文
共 17 条
[1]  
ADESIDA I, UNPUB J ELECTRON MAT
[2]   MASKED ION-BEAM LITHOGRAPHY - A FEASIBILITY DEMONSTRATION FOR SUBMICROMETER DEVICE FABRICATION [J].
BARTELT, JL ;
SLAYMAN, CW ;
WOOD, JE ;
CHEN, JY ;
MCKENNA, CM ;
MINNING, CP ;
COAKLEY, JF ;
HOLMAN, RE ;
PERRYGO, CM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1166-1171
[3]  
BEHRINGER U, 1981, P MICROCIRCUIT ENG C, P369
[4]  
CLEAVER JRA, 1983, P MICROCIRCUIT ENG C, P135
[5]  
DUBREUIL D, UNPUB
[6]   HIGH-RESOLUTION ION-BEAM LITHOGRAPHY [J].
ECONOMOU, NP ;
FLANDERS, DC ;
DONNELLY, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1172-1175
[7]   LIQUID-METAL ALLOY ION SOURCES FOR B, SB, AND SI [J].
GAMO, K ;
UKEGAWA, T ;
INOMOTO, Y ;
OCHIAI, Y ;
NAMBA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1182-1185
[8]   CHARACTERISTICS OF SUB-MICRON PORES OBTAINED BY CHEMICAL ETCHING OF NUCLEAR TRACKS IN POLYCARBONATE FILMS [J].
GUILLOT, G ;
RONDELEZ, F .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7155-7164
[9]   400-A HIGH ASPECT-RATIO LINES PRODUCED IN POLYMETHYL METHACRYLATE (PMMA) BY ION-BEAM EXPOSURE [J].
KARAPIPERIS, L ;
LEE, CA .
APPLIED PHYSICS LETTERS, 1979, 35 (05) :395-397
[10]   ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION [J].
KARAPIPERIS, L ;
ADESIDA, I ;
LEE, CA ;
WOLF, ED .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1259-1263