STUDY OF ELECTRON TRAPS IN N-GAAS RESULTING FROM INFRARED RAPID THERMAL ANNEALING

被引：29

作者：

KUZUHARA, M

NOZAKI, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.336891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3131 / 3136

页数：6

共 27 条

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DAVIES, DE ;

MCNALLY, PJ ;

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DAVIES, DE ;

MCNALLY, PJ .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :304-306

[7] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

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RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[8] CHANGE OF THE SURFACE-DENSITY OF THE MIDGAP LEVEL(EL2 OR EL0) IN BULK GAAS BY HEAT-TREATMENTS WITH VARIOUS CAPPING [J].

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APPLIED PHYSICS LETTERS, 1984, 45 (04) :461-463

[9] RADIATION ANNEALING OF SI-IMPLANTED AND S-IMPLANTED GAAS [J].

ITO, K ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05) :L299-L300

[10] A COMPARISON OF RAPID THERMAL ANNEALING AND CONTROLLED-ATMOSPHERE ANNEALING OF SI-IMPLANTED GAAS [J].

KANBER, H ;

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