ENHANCED ACTIVATION OF ZN-IMPLANTED GAAS

被引：16

作者：

DAVIES, DE ^{[1
]}

MCNALLY, PJ ^{[1
]}

机构：

[1] COMSAT LABS,CLARKSBURG,MD 20734

来源：

关键词：

D O I：

10.1063/1.94733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：304 / 306

页数：3

共 23 条

[1] EFFECT OF DUAL IMPLANTS INTO GAAS
AMBRIDGE, T
HECKINGBOTTOM, R
BELL, EC
SEALY, BJ
STEPHENS, KG
SURRIDGE, RK
[J]. ELECTRONICS LETTERS, 1975, 11 (15) : 314 - 315
[2] ENHANCED ANNEALING EFFECTS IN BORON-IMPLANTED LAYERS IN SILICON BY POSTIMPLANTATION OF SILICON IONS
BAUER, LO
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (03) : 107 - &
[3] BLAIRMES NG, 1968, PHYS LETT A, V28, P178
[4] CASEY HC, 1975, POINT DEFECTS SOLIDS, V2, pCH2
[5] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS
DAVIES, DE
MCNALLY, PJ
LORENZO, JP
JULIAN, M
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 102 - 103
[6] DAVIES DE, 1983, ELECTRON DEVICE LETT, V4, P356
[7] DAVIES DE, 1983, I PHYS C, V65, P169
[8] DAVIES DE, 1976, 4TH P C SCI IND APPL, P420
[9] COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE
ETTENBERG, M
NUESE, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3500 - 3508
[10] GULAI J, 1970, APPL PHYS LETT, V17, P332