ENHANCED ANNEALING EFFECTS IN BORON-IMPLANTED LAYERS IN SILICON BY POSTIMPLANTATION OF SILICON IONS

被引：7

作者：

BAUER, LO

机构：

来源：

关键词：

D O I：

10.1063/1.1654067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：107 / &

共 15 条

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[3]

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[4]

BLAMIRES NG, PRIVATE COMMUNICATIO

[5]

Crowder B. L., 1970, Radiation Effects, V6, P63, DOI 10.1080/00337577008235047

CROWDER, BL ;

MOREHEAD, FF .

[7] ROLE OF DAMAGE IN ANNEALING CHARACTERISTICS OF ION IMPLANTED SI [J].

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[8]

CROWDER BL, 1971 INT C ION IMPL

[9]

CROWDER BL, 1971, RADIATION EFFECTS, V6, P27

DAVIES, DE .