A COMPARISON OF RAPID THERMAL ANNEALING AND CONTROLLED-ATMOSPHERE ANNEALING OF SI-IMPLANTED GAAS

被引：45

作者：

KANBER, H ^{[1
]}

CIPOLLI, RJ ^{[1
]}

HENDERSON, WB ^{[1
]}

WHELAN, JM ^{[1
]}

机构：

[1] UNIV SO CALIF, DEPT MAT SCI, LOS ANGELES, CA 90089 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 10期

关键词：

D O I：

10.1063/1.335336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4732 / 4737

页数：6

共 21 条

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