STUDY OF MANGANESE ACCUMULATION IN ION-IMPLANTED GAAS INFLUENCED BY FERMI ENERGY AND ANNEALING TECHNIQUE

被引：19

作者：

KANBER, H ^{[1
]}

FENG, M ^{[1
]}

WHELAN, JM ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.333078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：347 / 352

页数：6

共 19 条

[1] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

CHRISTEL, LA ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055

[2] DISTRIBUTION OF IMPURITIES IN SEMI-INSULATING GAAS AFTER HEAT-TREATMENT IN HYDROGEN [J].

CLEGG, JB ;

SCOTT, GB ;

HALLAIS, J ;

MIRCEAROUSSEL, A .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1110-1112

[3] CR PROFILES IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 ENCAPSULANTS IN A H2-AS4 ATMOSPHERE [J].

EU, V ;

FENG, M ;

HENDERSON, WB ;

KIM, HB ;

WHELAN, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :473-475

[4] STUDY OF ELECTRICAL AND CHEMICAL PROFILES OF SI IMPLANTED IN SEMI-INSULATING GAAS SUBSTRATE ANNEALED UNDER SIO2 AND CAPLESS [J].

FENG, M ;

KWOK, SP ;

EU, V ;

HENDERSON, BW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2990-2993

[5] STUDY OF CR, SI AND MN DISTRIBUTION IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 IN AN H2-AS4 ATMOSPHERE [J].

FENG, M ;

EU, V ;

KANBER, H ;

HENDERSON, WB .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :973-986

[6]

HALLAIS J, 1977, I PHYS C SER B, V33, P220

[7]

HUBER AM, 1981, I PHYS C SER, V56, P579

[8]

Ilegems M., 1975, J APPL PHYS, V46, P3059

[9] CORRELATION BETWEEN CHEMICAL AND ELECTRICAL PROFILES IN SI+, SE+ AND S+ IMPLANTED BULK AND EPITAXIAL GAAS [J].

KANBER, H ;

FENG, M ;

EU, VK ;

RUSH, RC ;

HENDERSON, WB .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) :1083-1114

[10] REDISTRIBUTION OF MANGANESE AFTER ANNEALING OF GAAS IMPLANTED WITH SI+ AND SE+ [J].

KANBER, H ;

FENG, M ;

WHELAN, JM .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :960-962

← 1 2 →