CHARACTERIZATION OF ION-BEAM ETCHING INDUCED DEFECTS IN GAAS

被引：34

作者：

YUBA, Y

ISHIDA, T

GAMO, K

NAMBA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.584017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：253 / 256

页数：4

共 12 条

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[7] AN ANNEALING STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN GAAS [J].

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[8] PROFILING OF DEFECTS USING DEEP LEVEL TRANSIENT SPECTROSCOPY [J].

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