TRANSIT-TIME CONSIDERATIONS IN SHORT-PULSE PHOTOCONDUCTIVITY

被引：5

作者：

MATHUR, VK ^{[1
]}

LEE, CH ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 03期

关键词：

D O I：

10.1063/1.327768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1634 / 1636

页数：3

共 12 条

[1] HIGH-POWER SWITCHING WITH PICOSECOND PRECISION - APPLICATIONS TO HIGH-SPEED KERR CELL AND POCKELS CELL [J].

ANTONETTI, A ;

MALLEY, MM ;

MOUROU, G ;

ORSZAG, A .

OPTICS COMMUNICATIONS, 1977, 23 (03) :435-439

[2] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J].

AUSTON, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :101-103

[3]

AUSTON DH, 1977, ULTRA SHORT LIGHT PU, P189

[4] PICOSECOND 1-WAVELENGTH OPTOELECTRONIC GATE [J].

CASTAGNE, R ;

LAVAL, S ;

LAVAL, R .

ELECTRONICS LETTERS, 1976, 12 (17) :438-439

[5] MICROWAVE SWITCHING BY PICOSECOND PHOTOCONDUCTIVITY [J].

JOHNSON, AM ;

AUSTON, DH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (06) :283-287

[6] NONLINEAR ABSORPTION AND ULTRASHORT CARRIER RELAXATION-TIMES IN GERMANIUM UNDER IRRADIATION BY PICOSECOND PULSES [J].

KENNEDY, CJ ;

MATTER, JC ;

SMIRL, AL ;

WEICHE, H ;

HOPF, FA ;

PAPPU, SV ;

SCULLY, MO .

PHYSICAL REVIEW LETTERS, 1974, 32 (08) :419-421

[7] MEASUREMENTS ON PHOTOCONDUCTIVE LIFETIME OF CARRIERS IN GAAS BY OPTOELECTRONIC GATING TECHNIQUE [J].

LEE, CH ;

ANTONETTI, A ;

MOUROU, G .

OPTICS COMMUNICATIONS, 1977, 21 (01) :158-161

[8] PICOSECOND OPTOELECTRONIC SWITCHING IN GAAS [J].

LEE, CH .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :84-86

[9] CALCULATION OF 2-PHOTON CONDUCTIVITY UNDER NANOSECOND AND PICOSECOND PULSE EXCITATION IN SEMICONDUCTORS [J].

MATHUR, VK .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2845-2848

[10] RELAXATION OF PHOTOEXCITED CARRIERS IN GAAS [J].

MATHUR, VK ;

ROGERS, S .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :765-768

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