PHOTON-ASSISTED ELECTRIC-FIELD DOMAINS AND MULTIPHOTON-ASSISTED TUNNELING IN SEMICONDUCTOR SUPERLATTICES

被引：173

作者：

KEAY, BJ

ALLEN, SJ

GALAN, J

KAMINSKI, JP

CAMPMAN, KL

GOSSARD, AC

BHATTACHARYA, U

RODWELL, MJW

机构：

[1] OHIO STATE UNIV,DEPT PHYS,COLUMBUS,OH 43210

[2] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

[3] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[4] UNIV CARLOS III MADRID,E-28911 LEGANES,SPAIN

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.75.4098

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first observation of photon-assisted tunneling induced electric field domains, terahertz multiphoton-assisted tunneling, and an oscillatory dependence of the photon induced currents on terahertz electric field strength in semiconductor superlattices. The new structure in the current-voltage (I-V) characteristics-as well as the dependence of the current on terahertz electric field strength compares favorably with a model for the current and electrical field profile in superlattices in which new virtual states serve a role similar to the unperturbed quantum well states.

引用

页码：4098 / 4101

页数：4

共 8 条

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