EVALUATION OF RELATIVELY HIGH SURFACE STATE DENSITIES IN METAL-(THERMAL) OXIDE-SILICON STRUCTURES

被引：6

作者：

COURAT, JP

NUZILLAT, G

SIXOU, P

机构：

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 16期

关键词：

D O I：

10.1016/0038-1098(69)90498-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1123 / +

页数：1

相关论文

共 9 条

[1] BERGLUND CN, 1966, IEEE T ELECTRON DEV, P710
[2] COURAT JP, IN PRESS
[3] FREQUENCY DEPENDENCE OF IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES (SI-SIO2 T)
LEHOVEC, K
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 48 - &
[4] FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON
LEHOVEC, K
SLOBODSKOY, A
SPRAGUE, JL
[J]. PHYSICA STATUS SOLIDI, 1963, 3 (03): : 447 - 464
[5] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[6] INVESTIGATIONS ON HIGH-DENSITY SURFACE STATES IN MOS STRUCTURES USING VARIATIONS OF COMPLEX CAPACITY WITH FREQUENCY
NUZILLAT, G
SIXOU, P
[J]. JOURNAL DE PHYSIQUE, 1969, 30 (01): : 71 - +
[7] NUZILLAT G, 1969, THESIS TROSIEME CYCL
[8] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
TERMAN, LM
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 285 - 299
[9] LIMITATIONS OF MOS CAPACITANCE METHOD FOR DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES
ZAININGER, KH
WARFIELD, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 179 - +