FORECAST OF VLSI PROCESSING - HISTORICAL REVIEW OF THE 1ST DRY-PROCESSED IC

被引：17

作者：

PENN, TC

机构：

[1] Physical Sciences Research Laboratory, Texas Instruments Inc., Dallas

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 04期

关键词：

D O I：

10.1109/T-ED.1979.19471

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The principles of the flat-plate, radial flow plasma reactor and its rapid proliferation into production at Texas Instruments will be reviewed. From this foundation it was logical to attempt the fabrication of a semiconductor integrated circuit by all dry means. An electrically operating double-level metal CCD shift register was fabiicated in late 1975 with no liquids other than DI water and photcresist. Silicon, oxide, nitride, and aluminum were all plasma-etched. Photoresist was both developed and removed by novel dry means. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：640 / 643

页数：4