PATTERN PARTITIONING FOR ENHANCED PROXIMITY-EFFECT CORRECTIONS IN ELECTRON-BEAM LITHOGRAPHY

被引：14

作者：

PARIKH, M

SCHREIBER, DE

机构：

来源：

关键词：

D O I：

10.1147/rd.245.0530

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：530 / 536

页数：7

共 11 条

[1] Chang T. P., 1978, IBM Technical Disclosure Bulletin, V20, P3809
[2] PROXIMITY CORRECTION ENHANCEMENTS FOR 1-MUM DENSE CIRCUITS
GROBMAN, WD
SPETH, AJ
CHANG, THP
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (05) : 537 - 544
[3] CORRECTIONS TO PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY .1. THEORY
PARIKH, M
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4371 - 4377
[4] SELF-CONSISTENT PROXIMITY EFFECT CORRECTION TECHNIQUE FOR RESIST EXPOSURE (SPECTER)
PARIKH, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03): : 931 - 933
[5] Parikh M., 1979, IBM Technical Disclosure Bulletin, V21, P4278
[6] PROXIMITY EFFECTS IN ELECTRON LITHOGRAPHY - MAGNITUDE AND CORRECTION TECHNIQUES
PARIKH, M
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) : 438 - 457
[7] PHANG JHC, 1979, SEP P MICR ENG 79 AA
[8] SUGIYAMA N, 1978, 8TH INT C EL ION BEA, P184
[9] CHROME MASK FABRICATION WITH ELECTRON-BEAM LITHOGRAPHIC SYSTEM
TING, CH
ANDERSON, RL
SAIKI, DY
KRAFT, AJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03): : 948 - 952
[10] TING CH, 1979, SPIE, V174, P90