PROXIMITY EFFECTS IN ELECTRON LITHOGRAPHY - MAGNITUDE AND CORRECTION TECHNIQUES

被引:39
作者
PARIKH, M
机构
关键词
711 Electromagnetic Waves - 713 Electronic Circuits - 714 Electronic Components and Tubes - 745 Printing and Reprography;
D O I
10.1147/rd.244.0438
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
35
引用
收藏
页码:438 / 457
页数:20
相关论文
共 29 条
  • [1] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
    CHANG, THP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
  • [2] EXPOSURE MODEL FOR ELECTRON-SENSITIVE RESISTS
    GREENEICH, JS
    VANDUZER, T
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (05) : 286 - 299
  • [3] GREENEICH JS, 1978, COMMUNICATION AUG
  • [4] GREENEICH JS, 1979, 15TH S EL ION LAS BE
  • [5] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
    GROBMAN, WD
    LUHN, HE
    DONOHUE, TP
    SPETH, AJ
    WILSON, A
    HATZAKIS, M
    CHANG, THP
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 360 - 368
  • [6] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
    GROBMAN, WD
    LUHN, HE
    DONOHUE, TP
    SPETH, AJ
    WILSON, A
    HATZAKIS, M
    CHANG, THP
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 282 - 290
  • [7] GROBMAN WD, 1978, 8TH P INT C EL ION B, V78, P276
  • [8] GROBMAN WD, 1980, IBM J RES DEV, V24
  • [9] NEW METHOD OF OBSERVING ELECTRON PENETRATION PROFILES IN SOLIDS
    HATZAKIS, M
    [J]. APPLIED PHYSICS LETTERS, 1971, 18 (01) : 7 - &
  • [10] ENERGY DISSIPATION IN A THIN POLYMER FILM BY ELECTRON-BEAM SCATTERING - EXPERIMENT
    HAWRYLUK, RJ
    SMITH, HI
    SOARES, A
    HAWRYLUK, AM
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2528 - 2537