PROXIMITY CORRECTION ENHANCEMENTS FOR 1-MUM DENSE CIRCUITS

被引:14
作者
GROBMAN, WD
SPETH, AJ
CHANG, THP
机构
关键词
Compendex;
D O I
10.1147/rd.245.0537
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
LITHOGRAPHY
引用
收藏
页码:537 / 544
页数:8
相关论文
共 26 条
  • [1] Chang T. P., 1978, IBM Technical Disclosure Bulletin, V20, P3809
  • [2] SCANNING ELECTRON-BEAM LITHOGRAPHY FOR FABRICATION OF MAGNETIC-BUBBLE CIRCUITS
    CHANG, THP
    HATZAKIS, M
    WILSON, AD
    SPETH, AJ
    KERN, A
    LUHN, H
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1976, 20 (04) : 376 - 388
  • [3] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
    CHANG, THP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
  • [4] CHANG THP, 1976, 7TH P INT C EL ION B, P377
  • [5] CHANG THP, 1976, 7TH P INT C EL ION B, P392
  • [6] EXPOSURE MODEL FOR ELECTRON-SENSITIVE RESISTS
    GREENEICH, JS
    VANDUZER, T
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (05) : 286 - 299
  • [7] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
    GROBMAN, WD
    LUHN, HE
    DONOHUE, TP
    SPETH, AJ
    WILSON, A
    HATZAKIS, M
    CHANG, THP
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 360 - 368
  • [8] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
    GROBMAN, WD
    LUHN, HE
    DONOHUE, TP
    SPETH, AJ
    WILSON, A
    HATZAKIS, M
    CHANG, THP
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 282 - 290
  • [9] GROBMAN WD, 1978, 8TH P INT C EL ION B, P276
  • [10] GROBMAN WD, 1979, 15TH P S EL ION LAS