PROXIMITY CORRECTION ENHANCEMENTS FOR 1-MUM DENSE CIRCUITS

被引：14

作者：

GROBMAN, WD

SPETH, AJ

CHANG, THP

机构：

来源：

关键词：

Compendex;

D O I：

10.1147/rd.245.0537

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

LITHOGRAPHY

引用

页码：537 / 544

页数：8

共 26 条

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[2] SCANNING ELECTRON-BEAM LITHOGRAPHY FOR FABRICATION OF MAGNETIC-BUBBLE CIRCUITS
CHANG, THP
HATZAKIS, M
WILSON, AD
SPETH, AJ
KERN, A
LUHN, H
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1976, 20 (04) : 376 - 388
[3] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
CHANG, THP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
[4] CHANG THP, 1976, 7TH P INT C EL ION B, P377
[5] CHANG THP, 1976, 7TH P INT C EL ION B, P392
[6] EXPOSURE MODEL FOR ELECTRON-SENSITIVE RESISTS
GREENEICH, JS
VANDUZER, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (05) : 286 - 299
[7] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
GROBMAN, WD
LUHN, HE
DONOHUE, TP
SPETH, AJ
WILSON, A
HATZAKIS, M
CHANG, THP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 360 - 368
[8] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
GROBMAN, WD
LUHN, HE
DONOHUE, TP
SPETH, AJ
WILSON, A
HATZAKIS, M
CHANG, THP
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 282 - 290
[9] GROBMAN WD, 1978, 8TH P INT C EL ION B, P276
[10] GROBMAN WD, 1979, 15TH P S EL ION LAS