MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI2-N+ POLY-SI GATES

[11] MURARKA SP, UNPUBLISHED

[12] PENNEY WM, 1972, MOS LUTEGRATED CIRCU

[13] EFFECT OF HIGH-TEMPERATURE H2-ANNEALS ON SLOW-TRAPPING INSTABILITY OF MOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 531 - 535

[14] KINETICS OF SLOW-TRAPPING INSTABILITY AT SI-SIO2 INTERFACE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 743 - 746

[15] SINHA AK, UNPUBLISHED

[16] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

[11] MURARKA SP, UNPUBLISHED

[12] PENNEY WM, 1972, MOS LUTEGRATED CIRCU

[13] EFFECT OF HIGH-TEMPERATURE H2-ANNEALS ON SLOW-TRAPPING INSTABILITY OF MOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 531 - 535

[14] KINETICS OF SLOW-TRAPPING INSTABILITY AT SI-SIO2 INTERFACE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 743 - 746

[15] SINHA AK, UNPUBLISHED

[16] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2