DIFFUSION OF CD INTO INP AT 680-DEGREES-C

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[2] SCANNING ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF ZNSEXTE1-XP-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4136 - &

[3] BALK LJ, 1975, IITRI SCANNING ELECT, P448

[4] REPRODUCIBLE PREPARATION OF TWIN-FREE INP CRYSTALS USING THE LEC TECHNIQUE [J]. MATERIALS RESEARCH BULLETIN, 1980, 15 (01) : 63 - 72

[5] BONNER WA, 1980, J ELECTROCHEM SOC, V127, P1978

[6] BRASEN D, COMMUNICATION

[7] CASEY HC, 1973, ATOMIC DIFFUSION SEM, pCH6

[8] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1960 - &

[9] FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 924 - 926

[10] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J]. PHYSICAL REVIEW, 1956, 104 (03): : 617 - 618

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[2] SCANNING ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF ZNSEXTE1-XP-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4136 - &

[3] BALK LJ, 1975, IITRI SCANNING ELECT, P448

[4] REPRODUCIBLE PREPARATION OF TWIN-FREE INP CRYSTALS USING THE LEC TECHNIQUE [J]. MATERIALS RESEARCH BULLETIN, 1980, 15 (01) : 63 - 72

[5] BONNER WA, 1980, J ELECTROCHEM SOC, V127, P1978

[6] BRASEN D, COMMUNICATION

[7] CASEY HC, 1973, ATOMIC DIFFUSION SEM, pCH6

[8] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1960 - &

[9] FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 924 - 926

[10] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J]. PHYSICAL REVIEW, 1956, 104 (03): : 617 - 618