HIGH-PERFORMANCE TFTS FABRICATED BY XECL EXCIMER LASER ANNEALING OF HYDROGENATED AMORPHOUS-SILICON FILM

被引：254

作者：

SERA, K ^{[1
]}

OKUMURA, F ^{[1
]}

UCHIDA, H ^{[1
]}

ITOH, S ^{[1
]}

KANEKO, S ^{[1
]}

HOTTA, K ^{[1
]}

机构：

[1] NEC CORP LTD,OPTOELECTR RES LABS,OPTOELECTR EQUIPMENT RES LAB,KAWASAKI,KANAGAWA 213,JAPAN

来源：

关键词：

D O I：

10.1109/16.40970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2868 / 2872

页数：5

共 8 条

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[2] ITOH S, 1987, CLEO 87, P326
[3] MADAN SK, 1986, IEEE T ELECTRON DEV, V33, P1518
[4] MIMURA A, 1987, IEDM, P436
[5] Morozumi S., 1983, SID 83, P156
[6] FABRICATION OF HEAVILY-DOPED POLYCRYSTALLINE SILICON FILM USING A LASER-DOPING TECHNIQUE
SAMESHIMA, T
USUI, S
TOMITA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1678 - L1680
[7] SAMESHIMA T, 1985, 17TH ICSSDM, P12
[8] LEAKAGE CURRENT CHARACTERISTICS OF OFFSET-GATE-STRUCTURE POLYCRYSTALLINE-SILICON MOSFETS
SEKI, S
KOGURE, O
TSUJIYAMA, B
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) : 434 - 436