LEAKAGE CURRENT CHARACTERISTICS OF OFFSET-GATE-STRUCTURE POLYCRYSTALLINE-SILICON MOSFETS

被引：78

作者：

SEKI, S

KOGURE, O

TSUJIYAMA, B

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期

关键词：

D O I：

10.1109/EDL.1987.26684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：434 / 436

页数：3

共 8 条

[1] GRAIN-BOUNDARY STATES AND THE CHARACTERISTICS OF LATERAL POLYSILICON DIODES [J].

DEGRAAFF, HC ;

HUYBERS, M ;

DEGROOT, JG .

SOLID-STATE ELECTRONICS, 1982, 25 (01) :67-71

[2] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS [J].

FOSSUM, JG ;

ORTIZCONDE, A ;

SHICHIJO, H ;

BANERJEE, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1878-1884

[3] AN ANALYTIC MODEL TO ESTIMATE THE AVALANCHE BREAKDOWN VOLTAGE IMPROVEMENT FOR LDD DEVICES [J].

LAI, FS .

SOLID-STATE ELECTRONICS, 1985, 28 (10) :959-965

[4]

MADAN SK, 1986, IEEE T ELECTRON DEV, V33, P1518

[5] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J].

MALHI, SDS ;

SHICHIJO, H ;

BANERJEE, SK ;

SUNDARESAN, R ;

ELAHY, M ;

POLLACK, GP ;

RICHARDSON, WF ;

SHAH, AH ;

HITE, LR ;

WOMACK, RH ;

CHATTERJEE, PK ;

LAM, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :258-281

[6] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].

OGURA, S ;

TSANG, PJ ;

WALKER, WW ;

CRITCHLOW, DL ;

SHEPARD, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367

[7] EFFECTS OF CRYSTALLIZATION ON TRAP STATE DENSITIES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J].

SEKI, S ;

KOGURE, O ;

TSUJIYAMA, B .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :368-370

[8] LASER-RECRYSTALLIZED POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS WITH LOW LEAKAGE CURRENT AND HIGH SWITCHING RATIO [J].

SEKI, S ;

KOGURE, O ;

TSUJIYAMA, B .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :425-427

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