MICROVOIDS IN DIAMOND-LIKE AMORPHOUS-SILICON CARBIDE

被引:49
作者
CARRENO, MNP
PEREYRA, I
FANTINI, MCA
TAKAHASHI, H
LANDERS, R
机构
[1] USP,FEP,INST FIS,BR-01498970 SAO PAULO,SP,BRAZIL
[2] UNICAMP,DFA,INST FIS,BR-13081970 CAMPINAS,SP,BRAZIL
关键词
D O I
10.1063/1.355835
中图分类号
O59 [应用物理学];
学科分类号
摘要
The correlation between composition, microstructure, and optical properties of a-Si1-xCx:H thin films with different stoichiometries was established. The alloys were deposited by radio frequency glow discharge under ''starving'' plasma conditions from mixtures of SiH4 and CH4. The samples were characterized by small angle x-ray scattering, ultraviolet-visible and infrared spectrometry, and Auger electron spectroscopy. The results showed the presence of microvoids with sizes between similar or equal to 3 Angstrom and similar or equal to 8 Angstrom. The relative microvoid volume fraction displayed a maximum for x around 55 at. % and decreased for higher values of x. High carbon content alloys (x similar or equal to 70 at. %) not only have a lower relative microvoid volume fraction, but show optical gaps as high as 3.7 eV, high resistivity, and very low refractive index, indicating the presence of a diamond-like C-C structure. These remarkable results are attributed to the deposition under ''starving'' plasma conditions.
引用
收藏
页码:538 / 542
页数:5
相关论文
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