PHOTOLUMINESCENCE IN GAP RESULTING FROM NITROGEN ION-IMPLANTATION

[1] LACEY SD, 1969, ELECTRONICS LETTERS, V5, P10

[2] EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN-DOPED GAP P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (04) : 139 - &

[3] ZN AND TE IMPLANTATIONS INTO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1975 - +

[4] PHOTOLUMINESCENCE OF OXYGEN IN ZNTE INTRODUCED BY ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 129 - &

[5] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 680 - &

[1] LACEY SD, 1969, ELECTRONICS LETTERS, V5, P10

[2] EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN-DOPED GAP P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (04) : 139 - &

[3] ZN AND TE IMPLANTATIONS INTO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1975 - +

[4] PHOTOLUMINESCENCE OF OXYGEN IN ZNTE INTRODUCED BY ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 129 - &

[5] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 680 - &